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Introducing ROHM’s SiC (silicon carbide) products, the next generation of power devices offering superior performance and efficiency. With SiC's unique material properties, such as high breakdown electric field strength, high thermal conductivity, and high saturated electron drift velocity, ROHM’s SiC power devices provide higher power handling capability and lower power loss compared to traditional silicon-based devices.

ROHM offers a comprehensive lineup of SiC power devices including MOSFETs, Schottky barrier diodes (SBDs), and power module solutions, catering to a wide range of applications such as industrial, automotive, and renewable energy. The superior performance and reliability of ROHM’s SiC products make them an ideal choice for high-efficiency power supplies, inverters, and motor drives, contributing to energy savings and reduced environmental impact.

With ROHM’s commitment to innovation and quality, our SiC products are designed to meet the evolving needs of the power electronics industry, paving the way for a more sustainable and efficient future.

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    2000+

    Daily average RFQ Volume

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    Worldwide Manufacturers

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